Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
Identifieur interne : 000D50 ( Russie/Analysis ); précédent : 000D49; suivant : 000D51Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
Auteurs : RBID : Pascal:00-0153826Descripteurs français
- Pascal (Inist)
- Structure interface, Point quantique, Paire électron trou, Puits quantique, Rayonnement IR proche, Laser injection, Transition intrabande, Indium composé, Gallium composé, Arsenic composé, Aluminium composé, Emission spontanée, Inversion population, Rayonnement IR lointain, Résultat expérimental, Forme onde, InGaAs/AlGaAs, As Ga In, Al As Ga.
English descriptors
- KwdEn :
- Aluminium compound, Arsenic compound, Electron hole pair, Experimental result, Far infrared radiation, Gallium compound, Indium compound, Injection laser, Interface structure, Intraband transition, Near infrared radiation, Population inversion, Quantum dot, Quantum well, Spontaneous emission, Waveform.
Abstract
The physical mechanism for creation of intraband population inversion between levels of quantum dots under injection of electron-hole pairs is suggested. The method is based on employment of generation of interband radiation providing fast depopulation of quantum dot ground level. Spontaneous far-infrared radiation (λ ≃ 10...20 μm) from diode laser structures with InGaAs/AlGaAs quantum dots connected with intraband hole and/or electron transitions between levels of size quantization in quantum dots was found and investigated for the first time. Spontaneous far-infrared radiation is observed only under simultaneous generation of stimulated near-infrared radiation (λ ≃ 0.9 μm) connected with interband carrier transitions. Far-infrared emission is observed also from laser structures with InGaAs/GaAs quantum wells. Intensity of this radiation is about of order less then intensity of radiation from structures with quantum dots. Qualitative explanations of phenomena observed are proposed.
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Pascal:00-0153826Le document en format XML
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Firsov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St.Petersburg State Technical University</s1><s2>St.Petersburg, 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St.Petersburg State Technical University</wicri:noRegion></affiliation></author><author><name sortKey="Shalygin, V A" uniqKey="Shalygin V">V. A. Shalygin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St.Petersburg State Technical University</s1><s2>St.Petersburg, 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St.Petersburg State Technical University</wicri:noRegion></affiliation></author><author><name sortKey="Tulupenko, V N" uniqKey="Tulupenko V">V. N. Tulupenko</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Donbass State Engineering Academy</s1><s2>Kramatorsk 343913</s2><s3>UKR</s3><sZ>4 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Donbass State Engineering Academy</wicri:noRegion></affiliation></author><author><name sortKey="Shernyakov, Yu M" uniqKey="Shernyakov Y">Yu. M. Shernyakov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Egorov, A Yu" uniqKey="Egorov A">A. Yu. Egorov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Zhukov, A E" uniqKey="Zhukov A">A. E. Zhukov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Kovsh, A R" uniqKey="Kovsh A">A. R. Kovsh</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Kop Ev, P S" uniqKey="Kop Ev P">P. S. Kop Ev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Kochnev, I V" uniqKey="Kochnev I">I. V. Kochnev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Maximov, M V" uniqKey="Maximov M">M. V. Maximov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author><author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. Alferov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A.F.Ioffe Institute</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0153826</idno><date when="1999">1999</date><idno type="stanalyst">PASCAL 00-0153826 INIST</idno><idno type="RBID">Pascal:00-0153826</idno><idno type="wicri:Area/Main/Corpus">013785</idno><idno type="wicri:Area/Main/Repository">014923</idno><idno type="wicri:Area/Russie/Extraction">000D50</idno></publicationStmt><seriesStmt><idno type="ISSN">1017-2653</idno><title level="j" type="main">SPIE proceedings series</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compound</term><term>Arsenic compound</term><term>Electron hole pair</term><term>Experimental result</term><term>Far infrared radiation</term><term>Gallium compound</term><term>Indium compound</term><term>Injection laser</term><term>Interface structure</term><term>Intraband transition</term><term>Near infrared radiation</term><term>Population inversion</term><term>Quantum dot</term><term>Quantum well</term><term>Spontaneous emission</term><term>Waveform</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Structure interface</term><term>Point quantique</term><term>Paire électron trou</term><term>Puits quantique</term><term>Rayonnement IR proche</term><term>Laser injection</term><term>Transition intrabande</term><term>Indium composé</term><term>Gallium composé</term><term>Arsenic composé</term><term>Aluminium composé</term><term>Emission spontanée</term><term>Inversion population</term><term>Rayonnement IR lointain</term><term>Résultat expérimental</term><term>Forme onde</term><term>InGaAs/AlGaAs</term><term>As Ga In</term><term>Al As Ga</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The physical mechanism for creation of intraband population inversion between levels of quantum dots under injection of electron-hole pairs is suggested. The method is based on employment of generation of interband radiation providing fast depopulation of quantum dot ground level. Spontaneous far-infrared radiation (λ ≃ 10...20 μm) from diode laser structures with InGaAs/AlGaAs quantum dots connected with intraband hole and/or electron transitions between levels of size quantization in quantum dots was found and investigated for the first time. Spontaneous far-infrared radiation is observed only under simultaneous generation of stimulated near-infrared radiation (λ ≃ 0.9 μm) connected with interband carrier transitions. Far-infrared emission is observed also from laser structures with InGaAs/GaAs quantum wells. Intensity of this radiation is about of order less then intensity of radiation from structures with quantum dots. Qualitative explanations of phenomena observed are proposed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1017-2653</s0></fA01><fA05><s2>3890</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Material science and material properties for infrared optoelectronics : Kiev, 29 September - 2 October 1998</s1></fA09><fA11 i1="01" i2="1"><s1>VOROBJEV (L. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>FIRSOV (D. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHALYGIN (V. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>TULUPENKO (V. N.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHERNYAKOV (Yu. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>EGOROV (A. Yu.)</s1></fA11><fA11 i1="07" i2="1"><s1>ZHUKOV (A. E.)</s1></fA11><fA11 i1="08" i2="1"><s1>KOVSH (A. R.)</s1></fA11><fA11 i1="09" i2="1"><s1>KOP'EV (P. S.)</s1></fA11><fA11 i1="10" i2="1"><s1>KOCHNEV (I. V.)</s1></fA11><fA11 i1="11" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA11 i1="12" i2="1"><s1>MAXIMOV (M. V.)</s1></fA11><fA11 i1="13" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="14" i2="1"><s1>ALFEROV (Zh. I.)</s1></fA11><fA12 i1="01" i2="1"><s1>SIZOV (Fiodor F.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>St.Petersburg State Technical University</s1><s2>St.Petersburg, 195251</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Donbass State Engineering Academy</s1><s2>Kramatorsk 343913</s2><s3>UKR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>A.F.Ioffe Institute</s1><s2>St.Petersburg 194021</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>International Society for Optical Engineering</s1><s2>Bellingham WA</s2><s3>USA</s3><s9>patr.</s9></fA18><fA20><s1>27-34</s1></fA20><fA21><s1>1999</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-3491-4</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000080084510040</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0153826</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>SPIE proceedings series</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The physical mechanism for creation of intraband population inversion between levels of quantum dots under injection of electron-hole pairs is suggested. The method is based on employment of generation of interband radiation providing fast depopulation of quantum dot ground level. Spontaneous far-infrared radiation (λ ≃ 10...20 μm) from diode laser structures with InGaAs/AlGaAs quantum dots connected with intraband hole and/or electron transitions between levels of size quantization in quantum dots was found and investigated for the first time. Spontaneous far-infrared radiation is observed only under simultaneous generation of stimulated near-infrared radiation (λ ≃ 0.9 μm) connected with interband carrier transitions. Far-infrared emission is observed also from laser structures with InGaAs/GaAs quantum wells. Intensity of this radiation is about of order less then intensity of radiation from structures with quantum dots. Qualitative explanations of phenomena observed are proposed.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F01</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Structure interface</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Interface structure</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estructura interfaz</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Point quantique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Quantum dot</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Punto cuántico</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Paire électron trou</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electron hole pair</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Par electrón hueco</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Puits quantique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Quantum well</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Pozo cuántico</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Rayonnement IR proche</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Near infrared radiation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Radiación infrarroja cercana</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Laser injection</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Injection laser</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Laser inyección</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Transition intrabande</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Intraband transition</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Transición intrabanda</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Indium composé</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Indium compound</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Indio compuesto</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Gallium composé</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Gallium compound</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Galio compuesto</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Arsenic composé</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Arsenic compound</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Arsénico compuesto</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Aluminium composé</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Aluminium compound</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Aluminio compuesto</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Emission spontanée</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Spontaneous emission</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Emisión espontánea</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Inversion population</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Population inversion</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Inversión populación</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Rayonnement IR lointain</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Far infrared radiation</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Radiación infrarroja lejana</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Résultat expérimental</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Experimental result</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Resultado experimental</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Forme onde</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Waveform</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Forma onda</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>InGaAs/AlGaAs</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Al As Ga</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>108</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International conference on material science and material properties for infrared optoelectronics</s1><s2>4</s2><s3>Kiev UKR</s3><s4>1998-09-29</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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